Photoionization studies of the B⁺ valence shell: experiment and theorySCHIPPERS, S; MÜLLER, A; MCLAUGHLIN, B. M et al.Journal of physics. B. Atomic, molecular and optical physics (Print). 2003, Vol 36, Num 16, pp 3371-3381, issn 0953-4075, 11 p.Article

Low energy boron implantation in isotopically pure silicon by simulationTSATIS, D. E.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 648-650, issn 0734-211XArticle

The effect of channel boron implants on electron mobility in NMOSFET'sASLAM, M.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 9, pp 1563-1564, issn 0018-9383Article

Application of iterative deconvolution procedures for evaluation of boron depth profilesCERVENA, J; HNATOWICZ, V; KVITEK, J et al.Czechoslovak journal of physics. 1985, Vol 35, Num 4, pp 413-419, issn 0011-4626Article

Simulation of anomalous Be diffusion in semi-insulating InPFARLEY, C. W; STREETMAN, B. G.Journal of the Electrochemical Society. 1984, Vol 131, Num 4, pp 946-947, issn 0013-4651Article

Characterization of boron-implanted silicon at various depths from the surface by Raman scatteringWONG, P. T. T; SIMARD-NORMANDIN, M.Journal of the Electrochemical Society. 1985, Vol 132, Num 4, pp 980-982, issn 0013-4651Article

The elusive 2s3s 1S level in B IIMARTINSON, I; AWAYA, Y; EKBERG, J. O et al.Journal of physics. B. Atomic, molecular and optical physics (Print). 2003, Vol 36, Num 3, pp 419-425, issn 0953-4075, 7 p.Article

Formation of shallow p⁺n junctions by B-ion implantation in Si substrates with amorphous layersISHIWARA, H; HORITA, S.Japanese journal of applied physics. 1985, Vol 24, Num 5, pp 568-573, issn 0021-4922Article

Effects of ion-implantation damage on two-dimensional boron diffusion in siliconMARCHIANDO, J. F; ALBERS, J.Journal of applied physics. 1987, Vol 61, Num 4, pp 1380-1391, issn 0021-8979Article

Mise en ordre stimulée par les ions de la structure d'un silicium irradié au préalableABROYAN, I. A; NIKULINA, L. M; TITOV, A. I et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 6, pp 1030-1034, issn 0015-3222Article

High dose rate effect of focused-ion-beam boron implantation into siliconTAMURA, M; SHUKURI, S; ISHITANI, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 6, pp L417-L420, issn 0021-4922, 2Article

Low-energy autoionization spectra of doubly excited states in B⁺ (1s ²2pnl, n ≥ 4)BRUCH, R; FUELLING, S; SCHNEIDER, D et al.Physical review. A, General physics. 1990, Vol 42, Num 3, pp 1200-1205, issn 0556-2791, 6 p.Article

Doubly excited ¹S^e, ¹D^e and ¹G^e states of He, Li⁺, Be²⁺ and B³⁺RAY, D; MUKHERJEE, P. K.Journal of physics. B. Atomic, molecular and optical physics (Print). 1991, Vol 24, Num 6, pp 1241-1249, issn 0953-4075, 9 p.Article

Electron-impact double ionization of B⁺PINDZOLA, M. S; LUDLOW, J. A; BALLANCE, C. P et al.Journal of physics. B. Atomic, molecular and optical physics (Print). 2011, Vol 44, Num 10, issn 0953-4075, 105202.1-105202.4Article

Boron ion implantation through Mo and Mo silicide layers for shallow junction formationANGELUCCI, R; SOLMI, S; ARMIGLIATO, A et al.Journal of applied physics. 1991, Vol 69, Num 7, pp 3962-3967, issn 0021-8979Article

Formation of ultrashallow p⁺-n junctions by low-energy boron implantation using a modified ion implanterHONG, S. N; RUGGLES, G. A; PAULOS, J. J et al.Applied physics letters. 1988, Vol 53, Num 18, pp 1741-1743, issn 0003-6951Article

Monte Carlo simulation of the annealing behaviour of B+ cascades (10 KeV-1 MeV) in SrMAZZONE, A. M.Radiation effects express section. 1987, Vol 1, Num 3, pp 129-140Article

Dopage du silicium par les ions bore aux températures d'implantation 600-1100°CKACHURIN, G. A; TYSCHENKO, I. E; FEL'SKOV, M et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 7, pp 1193-1197, issn 0015-3222Article

Calculated wavelengths and oscillator strengths for Be I, B II, C III, and N IV for n=2-2, 2-3, 3-3, and other transitionsFAWCETT, B. C.Atomic data and nuclear data tables. 1984, Vol 30, Num 3, pp 423-455, issn 0092-640XArticle

Development of boron and phosphorus liquid-metal-ion sources = Développement de sources d'ion de métal liquide à bore et phosphoreISHITANI, T; UMEMURA, K; KAWANAMI, Y et al.Journal de physique. Colloques. 1984, Vol 45, Num 9, pp 191-196, issn 0449-1947Article

Restauration de la structure des couches de carbure de silicium après implantation d'ionsVIOLIN, EH. E; DEMAKOV, K. D; KAL'NIN, A. A et al.Fizika tverdogo tela. 1984, Vol 26, Num 5, pp 1575-1577, issn 0367-3294Article

KLL Auger energies for boron atomic ions based on the saddle-point variational methodLUKEN, W. L; LEONARD, J. M.Physical review. A, General physics. 1983, Vol 28, Num 2, pp 532-537, issn 0556-2791Article

Monitoring of low-dose ion implantation in siliconHARA, T; HAGIWARA, H; ICHIKAWA, R et al.IEEE electron device letters. 1990, Vol 11, Num 11, pp 485-486, issn 0741-3106, 2 p.Article

Low-energy contaminant in B⁺⁺ implantation and its eliminationWU, C. P; KOLONDRA, F; MAGEE, C. W et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 7, pp 1735-1740, issn 0013-4651Article

Two-dimensional modeling of ion implantation with spatial momentsHOBLER, G; LANGER, E; SELBERHERR, S et al.Solid-state electronics. 1987, Vol 30, Num 4, pp 445-455, issn 0038-1101Article